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參數(shù)資料
| 型號： | 934024390115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.175 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, SC-70, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 934024390115 |
2002 Apr 05
2
Philips Semiconductors
Product specication
High-speed double diode
BAV70W
FEATURES
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
APPLICATIONS
High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAV70W consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in the very small SOT323 plastic SMD
package.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
Fig.1
Simplified outline (SOT323; SC-70) and
symbol.
Marking code: A4.
handbook, halfpage
3
2
1
Top view
MAM382
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
single diode loaded; note 1; see Fig.2
175
mA
double diode loaded; note 1; see Fig.2
100
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward
current
square wave; Tj =25 °C prior to surge;
see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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