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參數(shù)資料
| 型號(hào)： | 934026800115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 934026800115 |
1999 May 27
3
Philips Semiconductors
Product specication
NPN switching transistor
PMSS3904
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =30V
50
nA
IE = 0; VCB =30V; Tj = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
50
nA
hFE
DC current gain
VCE = 1 V; see Fig.2
IC = 0.1 mA
40
IC = 1 mA
70
IC = 10 mA
100
300
IC = 50 mA; note 1
60
IC = 100 mA; note 1
30
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB =1mA
200
mV
IC = 50 mA; IB = 5 mA; note 1
300
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
650
850
mV
IC = 50 mA; IB = 5 mA; note 1
950
mV
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
4pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
12
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz 180
MHz
F
noise gure
IC = 100 A; VCE =5V; RS =1k
f = 10 Hz to 15.7 KHz
5dB
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
ICon = 10 mA; IBon = 1 mA;
IBoff = 1 mA; VCC =3V;
VBB = 1.9 V
110
ns
td
delay time
50
ns
tr
rise time
60
ns
toff
turn-off time
1200
ns
ts
storage time
1000
ns
tf
fall time
200
ns
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