參數(shù)資料
型號: 934028420185
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC, SC-59, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 32K
代理商: 934028420185
1996 Sep 03
2
Philips Semiconductors
Product specication
High-speed double diode
1PS184
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 80 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS184 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
Fig.1 Simplified outline (SC59) and symbol.
Top view
21
3
MAM084
21
3
Marking code: B3T.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
80
V
IF
continuous forward current
single diode loaded; see Fig.2;
note 1
215
mA
double diode loaded; see Fig.2;
note 1
125
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge
t=1
s
4A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
相關(guān)PDF資料
PDF描述
934028430115 0.215 A, 85 V, SILICON, SIGNAL DIODE
934028430135 0.215 A, 85 V, SILICON, SIGNAL DIODE
934028430185 0.215 A, 85 V, SILICON, SIGNAL DIODE
934028440185 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
934028450185 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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