參數(shù)資料
型號: 934028630135
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 25 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, UMT3, SMD, SC-70, CMPAK-3
文件頁數(shù): 2/8頁
文件大?。?/td> 44K
代理商: 934028630135
1999 Apr 15
2
Philips Semiconductors
Product specication
PNP medium frequency transistor
BF824W
FEATURES
Low current (max. 25 mA)
Low voltage (max. 30 V).
APPLICATIONS
RF stages in FM front-ends in common base
configuration.
DESCRIPTION
PNP medium frequency transistor in a SOT323 plastic
package.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BF824W
F8
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
30
V
VEBO
emitter-base voltage
open collector
4V
IC
collector current (DC)
25
mA
ICM
peak collector current
25
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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