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參數(shù)資料
| 型號(hào)： | 934028850235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 148K |
| 代理商： | 934028850235 |
1995 Apr 25
2
Philips Semiconductors
Product specication
N-channel dual gate MOS-FETs
BF909; BF909R
FEATURES
Specially designed for use at 5 V supply voltage
High forward transfer admittance
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1 Simplified outline (SOT143) and symbol.
BF909 marking code: M28.
handbook, halfpage
43
2
1
Top view
MAM124
s,b
d
g
1
g
2
Fig.2 Simplified outline (SOT143R) and symbol.
BF909R marking code: M29.
handbook, halfpage
Top view
MAM125 - 1
s,b
d
g
1
g
2
34
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
7V
ID
drain current
40
mA
Ptot
total power dissipation
200
mW
Tj
operating junction temperature
150
°C
y
fs
forward transfer admittance
36
43
50
mS
Cig1-s
input capacitance at gate 1
3.6
4.3
pF
Crs
reverse transfer capacitance
f = 1 MHz
35
50
fF
F
noise gure
f = 800 MHz
2
2.8
dB
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