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參數(shù)資料
| 型號(hào)： | 934030430133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.68 A, 1200 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | 934030430133 |
1996 May 30
3
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYV26 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IFRM
repetitive peak forward current
Tamb =60 °C; see Figs 8 and 9
BYV26A to E
6.0
A
BYV26F and G
6.4
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
30
A
ERSM
non-repetitive peak reverse
avalanche energy
IR = 400 mA; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Figs 12 and 13
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 14 and 15
BYV26A to E
1.3
V
BYV26F and G
1.3
V
VF
forward voltage
IF =1A;
see Figs 14 and 15
BYV26A to E
2.50
V
BYV26F and G
2.15
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV26A
300
V
BYV26B
500
V
BYV26C
700
V
BYV26D
900
V
BYV26E
1100
V
BYV26F
1300
V
BYV26G
1500
V
IR
reverse current
VR =VRRMmax; see Fig.16
5
A
VR =VRRMmax;
Tj = 165 °C; see Fig.16
150
A
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig.20
BYV26A to C
30
ns
BYV26D and E
75
ns
BYV26F and G
150
ns
Cd
diode capacitance
f = 1 MHz; VR =0V;
see Figs 17 and 18
BYV26A to C
45
pF
BYV26D and E
40
pF
BYV26F and G
35
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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