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參數(shù)資料
| 型號： | 934031010185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 15/19頁 |
| 文件大小： | 517K |
| 代理商： | 934031010185 |
2003 Apr 10
5
Philips Semiconductors
Product specication
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB =50V; IE =0
100
nA
ICEO
collector-emitter cut-off current
VCE =30V; IB =0
1
A
VCE =30V; IB = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
400
A
hFE
DC current gain
VCE =5V; IC = 5 mA
30
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
150
mV
Vi(off)
input-off voltage
IC = 100 A; VCE =5V
1.1
0.8
V
Vi(on)
input-on voltage
IC = 10 mA; VCE = 0.3 V
2.5
1.8
V
R1
input resistor
7
10
13
k
resistor ratio
0.8
1
1.2
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
R2
R1
--------
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