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參數(shù)資料
| 型號： | 934031240113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.25 A, 125 V, SILICON, SIGNAL DIODE, DO-34 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 934031240113 |
1996 Mar 13
2
Philips Semiconductors
Product specication
Low-leakage diode
BAS45A
FEATURES
Continuous reverse voltage:
max. 125 V
Repetitive peak forward current:
max. 625 mA
Low reverse current: max. 1 nA
Switching time: typ. 1.5 s.
APPLICATION
Low leakage current applications.
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a
hermetically-sealed glass SOD68 (DO-34) package.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
handbook, halfpage
MAM156
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
125
V
VR
continuous reverse voltage
125
V
IF
continuous forward current
see Fig.2; note 1
250
mA
IFRM
repetitive peak forward current
625
mA
IFSM
non-repetitive peak forward current square wave; Tj =25 °C prior to
surge; see Fig.4
tp =1 s
4A
tp =1ms
1A
tp =1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C
300
mW
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
175
°C
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