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| 型號： | 934031480135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 119K |
| 代理商： | 934031480135 |
1995 Apr 25
7
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF904WR
Fig.11 Drain current as a function of gate 1
supply voltage (= VGG); typical values;
see Fig.19.
VDS = 5 V; VG2-S =4V.
RG1 = 120 k (connected to VGG); Tj =25 °C.
handbook, halfpage
0
12
8
4
0
15
MLD275
23
4
I D
(mA)
V
(V)
GG
Fig.12 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values; see Fig.19.
VG2-S =4V.
RG1 connected to VGG; Tj =25 °C.
handbook, halfpage
0
20
10
15
5
0
24
8
MLD274
6
V
= V
(V)
GG
DS
I D
(mA)
R
= 47 k
G1
68 k
82 k
100 k
120 k
150 k
180 k
220 k
VDS = 5 V; Tj =25 °C.
RG = 120 k (connected to VGG).
Fig.13 Drain current as a function of gate 2 voltage;
typical values; see Fig.19.
handbook, halfpage
024
6
12
0
MLD276
8
4
I D
(mA)
4.5 V
4 V
3.5 V
3 V
V
(V)
G2 S
V
= 5 V
GG
Fig.14 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.19.
VDS = 5 V; Tj =25 °C.
RG = 120 k (connected to VGG).
handbook, halfpage
02
46
40
30
10
0
20
MLB945
I G1
(
A)
V
(V)
G2 S
4.5 V
4 V
3.5 V
3 V
V
= 5 V
GG
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