參數(shù)資料
型號(hào): 934032050112
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 放大器
英文描述: 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: SOT-115J, 7 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 49K
代理商: 934032050112
2001 Nov 14
2
Philips Semiconductors
Product specication
860 MHz, 20 dB gain push-pull amplier
BGY885B
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
DESCRIPTION
The BGY885B is a hybrid amplifier module designed for
CATV systems operating over a frequency range of
40 to 860 MHz at a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5+VB
7, 8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
19.5
20.5
dB
f = 860 MHz
20
dB
Itot
total current consumption (DC)
VB =24V
235
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
65
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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