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參數(shù)資料
| 型號(hào)： | 934032310115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 934032310115 |
2000 May 23
4
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
2. IC = 40 mA; VCE =8V; RL =50 ; Tamb =25 °C;
a) fp = 900 MHz; fq = 902 MHz; measured at f(2p q) = 898 MHz and f(2q p) = 904 MHz.
3. dim = 60 dB (DIN45004B); Vp =Vo; Vq =Vo 6 dB; Vr =Vo 6 dB; RL =75 ; VCE = 8 V; IC = 40 mA;
a) fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; Vo = 275 mV; RL =75 ; Tamb =25 °C;
a) fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown
voltage
open emitter; IC =10 A; IE =0
20
V
V(BR)CES
collector-emitter breakdown
voltage
RBE = 0; IC =40 A15
V
V(BR)EBO
emitter-base breakdown
voltage
open collector; IE = 100 A; IC = 0
2.5
V
ICBO
collector cut-off current
open emitter; VCB =8V; IE =0
50
nA
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
9
GHz
Cc
collector capacitance
IE =ie = 0; VCB = 8 V; f = 1 MHz
0.9
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
2
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
0.5
pF
GUM
maximum unilateral power gain;
note 1
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
16
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
10
dB
|s21|2
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
14
15
dB
F
noise gure
Γ
s =Γopt; IC = 10 mA; VCE =8V;
f = 900 MHz
1.3
1.8
dB
Γ
s =Γopt; IC = 40 mA; VCE =8V;
f = 900 MHz
1.9
2.4
dB
Γs =Γopt; IC = 10 mA; VCE =8V;
f = 2 GHz
2.1
dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; f = 900 MHz;
RL =50 ; Tamb =25 °C
21
dBm
ITO
third order intercept point
note 2
34
dBm
Vo
output voltage
note 3
500
mV
d2
second order intermodulation
distortion
note 4
50
dB
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
-------------------------------------------------------- dB.
log
=
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