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參數(shù)資料
| 型號(hào)： | 934032330135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 9/16頁(yè) |
| 文件大小： | 123K |
| 代理商： | 934032330135 |
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2000 May 23
2
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
RF front end wideband applications in
the GHz range, such as analog and
digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT,
etc.), radar detectors, pagers,
satellite television tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial
transistors in 4-pin dual-emitter
SOT343N and SOT343R plastic
packages.
MARKING
PINNING
TYPE NUMBER
CODE
BFG540W
N9
BFG540W/X
N7
BFG540W/XR
N8
PIN
DESCRIPTION
BFG540W (see Fig.1)
1
collector
2
base
3
emitter
4
emitter
BFG540W/X (see Fig.1)
1
collector
2
emitter
3
base
4
emitter
BFG540W/XR (see Fig.2)
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT343N.
fpage
Top view
MBK523
2
1
3
4
Fig.2 SOT343R.
alfpage
Top view
MSB842
21
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage RBE =0
15
V
IC
collector current (DC)
120
mA
Ptot
total power dissipation
Ts ≤ 85 °C
500
mW
hFE
DC current gain
IC = 40 mA; VCE = 8 V
100
120
250
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
0.5
pF
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb =25 °C
9
GHz
GUM
maximum unilateral
power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb =25 °C
16
dB
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb =25 °C10
dB
|s21|2
insertion power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb =25 °C14
15
dB
F
noise gure
Γ
s =Γopt; IC = 10 mA; VCE =8V; f=2GHz
2.1
dB
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