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參數(shù)資料
| 型號： | 934032640215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.16 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 934032640215 |
2001 Oct 12
2
Philips Semiconductors
Product specication
Low-leakage double diode
BAV199
FEATURES
Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 s
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
APPLICATION
Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are
connected in series.
MARKING
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
TYPE NUMBER
MARKING
CODE(1)
BAV199
JY
PINNING
PIN
DESCRIPTION
1
anode
2
cathode
3
anode; cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns
21
3
Top view
MAM107
21
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
single diode loaded; note 1; see Fig.2
160
mA
double diode loaded; note 1; see Fig.2
140
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward
current
square wave; Tj =25 °C prior to surge;
see Fig.4
tp =1 s
4A
tp =1ms
1A
tp =1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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