參數(shù)資料
型號(hào)： 934033470135
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, UMT3, SC-70, CMPAK-3
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 52K
代理商： 934033470135
1997 Sep 03
3
Philips Semiconductors
Product specication
NPN high-voltage transistors
BF820W; BF822W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BF820W
300
V
BF822W
250
V
VCEO
collector-emitter voltage
open base
BF820W
300
V
BF822W
250
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
50
mA
ICM
peak collector current
100
mA
IBM
peak base current
50
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 200 V
10
nA
IE = 0; VCB = 200 V; Tj = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
50
nA
hFE
DC current gain
IC = 25 mA; VCE =20V
50
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB = 5mA; note 1
600
mV
Cre
feedback capacitance
IC =ic = 0; VCB = 30 V; f = 1 MHz
1.6
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
60
MHz
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