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參數(shù)資料
| 型號： | 934033550114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 386K |
| 代理商： | 934033550114 |
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Product Information
MX0912B351Y; NPN
microwave power
transistor
Information as of 2001-11-13
Stay informed
Download datasheet
Blockdiagram
Description
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base
connected to flange. It is mounted in common base configuration and specified in class C.
Features
Interdigitated structure; high emitter efficiency
q
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
q
Gold metallization realizes very stable characteristics and excellent lifetime
q
Multicell geometry gives good balance of dissipated power and low thermal resistance
q
Input and output matching cell allows an easier design of circuits. Columns
q
Applications
Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN
application.
Datasheet
Page
count
File
size
(kB)
Datasheet
MX0912B351Y NPN microwave
power transistor
19-Feb-97
Product
Specification
12
76
PDF
File
Philips Semiconductors; MX0912B351Y; NPN microwave power transistor
file:///G|/imaging/BITTING/mail_pdf/cpl_rework/mx0912b351y.html (1 of 2) [1/9/2002 11:57:56 AM]
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