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參數(shù)資料
| 型號： | 934034200115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 934034200115 |
2001 Dec 19
2
Philips Semiconductors
Product specication
PNP general purpose double transistor
PUMT1
FEATURES
Low current (max. 100 mA)
Low voltage (max. 40 V)
Reduces number of components and boardspace.
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
Two independently operating PNP transistors in an SC-88;
SOT363 plastic package. NPN complement: PUMX1.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
PUMT1
FtF
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
3, 6
collector
TR2; TR1
Fig.1
Simplified outline (SC-88; SOT363)
and symbol.
handbook, halfpage
13
2
4
5
6
Top view
MAM339
13
2
TR1
TR2
6
4
5
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
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