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參數(shù)資料
| 型號(hào)： | 934034210115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 43K |
| 代理商： | 934034210115 |
1999 Apr 14
3
Philips Semiconductors
Preliminary specication
NPN general purpose double transistor
PUMX1
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per device
Rth j-a
thermal resistance from junction to ambient
note 1
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
ICBO
collector cut-off current
IE = 0; VCB =30V
100
nA
IE = 0; VCB = 30 V; Tj = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB =4V
100
nA
hFE
DC current gain
IC = 1 mA; VCE = 6 V
120
VCEsat
collector-emitter saturation
voltage
IC = 50 mA; IB = 5 mA; note 1
200
mV
Cc
collector capacitance
IE =ie = 0; VCB = 12 V; f = 1 MHz
1.5
pF
fT
transition frequency
IC = 2 mA; VCE = 12 V; f = 100 MHz
100
MHz
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