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| 型號(hào)： | 934034220115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | 934034220115 |
2002 May 06
2
Philips Semiconductors
Preliminary specication
NPN/PNP general purpose transistors
PUMZ1
FEATURES
Low current (max. 100 mA)
Low voltage (max. 40 V)
Reduces number of components and boardspace.
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
Two independently operating NPN/PNP transistors in an
SC-88; SOT363 plastic package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
PUMZ1
FtZ
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
3, 6
collector
TR2; TR1
Fig.1 Simplified outline (SC-88) and symbol.
handbook, halfpage
13
2
4
5
6
Top view
MAM341
13
2
TR1
TR2
6
4
5
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
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