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參數(shù)資料
| 型號： | 934034350215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 934034350215 |
1997 Sep 04
2
Philips Semiconductors
Product specication
N-channel junction FETs
BF861A; BF861B; BF861C
FEATURES
High transfer admittance
Low input capacitance
Low feedback capacitance
Low noise.
APPLICATIONS
Preamplifiers for AM tuners in car radios.
DESCRIPTION
N-channel symmetrical junction field effect transistors in a
SOT23 package.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
s
source
2
d
drain
3
g
gate
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
Marking codes:
BF861A: M33.
BF861B: M34.
BF861C: M35.
handbook, halfpage
s
d
g
21
3
MAM036
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
25
V
IDSS
drain current
VGS = 0; VDS =8V
BF861A
2
6.5
mA
BF861B
6
15
mA
BF861C
12
25
mA
Ptot
total power dissipation
up to Tamb =25 °C
250
mW
yfs
forward transfer admittance
VGS = 0; VDS =8V
BF861A
12
20
mS
BF861B
16
25
mS
BF861C
20
30
mS
Ciss
input capacitance
f = 1 MHz
10
pF
Crss
reverse transfer capacitance
f = 1 MHz
2.7
pF
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