參數(shù)資料
型號(hào): 934034400215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: PLASTIC, SMD, SST3, 3 PIN
文件頁數(shù): 7/12頁
文件大小: 102K
代理商: 934034400215
1997 Sep 04
4
Philips Semiconductors
Product specication
N-channel junction FETs
BF861A; BF861B; BF861C
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C; VDS = 8 V; VGS = 0; unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage IG = 1 A
25
V
VGSoff
gate-source cut-off voltage
ID =1 A
BF861A
0.2
1V
BF861B
0.5
1.5
V
BF861C
0.8
2V
VGSS
gate-source forward voltage
VDS = 0; IG =1mA
1V
IDSS
drain current
BF861A
2
6.5
mA
BF861B
6
15
mA
BF861C
12
25
mA
IGSS
gate cut-off current
VGS = 20 V; VDS =0
1nA
y
fs
forward transfer admittance
BF861A
12
20
mS
BF861B
16
25
mS
BF861C
20
30
mS
gos
common source output
conductance
BF861A
200
S
BF861B
250
S
BF861C
300
S
Ciss
input capacitance
f = 1 MHz
10
pF
Crss
reverse transfer capacitance
f = 1 MHz
2.1
2.7
pF
Vn/√B
equivalent input noise voltage
VGS = 0; f = 1 MHz
1.5
nV/
√Hz
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