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參數(shù)資料
| 型號： | 934036560215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, SC-61B, 4 PIN |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 159K |
| 代理商： | 934036560215 |
1995 Apr 25
4
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
BF1100; BF1100R
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
Notes
1. RG1 connects gate 1 to VGG = 9 V; see Fig.27.
2. RG1 connects gate 1 to VGG = 12 V; see Fig.27.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
BF1100
500
K/W
BF1100R
550
K/W
Rth j-s
thermal resistance from junction to soldering point
note 2
BF1100
Ts =92 °C
290
K/W
BF1100R
Ts =78 °C
360
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S =VDS = 0; IG1-S = 1 mA
13.2
20
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S =VDS = 0; IG2-S = 1 mA
13.2
20
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S =VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S =VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S =4V; VDS =9V;
ID =20 A
0.3
1
V
VG2-S =4V; VDS =12V;
ID =20 A
0.3
1
V
VG2-S(th)
gate 2-source threshold voltage
VG1-S =4V; VDS =9V;
ID =20 A
0.3
1.2
V
VG1-S =4V; VDS =12V;
ID =20 A
0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =9V;
RG1 = 180 k; note 1
813
mA
VG2-S =4V; VDS =12V;
RG1 = 250 k; note 2
813
mA
IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S =12V
50
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =12V
50
nA
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