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參數(shù)資料
| 型號： | 934038000127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 56K |
| 代理商： | 934038000127 |
Philips Semiconductors
Product specification
Rectifier diodes
BY229F, BY229X series
fast, soft-recovery
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 200 V/ 400 V/ 600 V/800 V
Fast switching
Soft recovery characteristic
I
F(AV) = 8 A
High thermal cycling performance
Isolated mounting tab
I
FSM ≤ 60 A
t
rr ≤ 135 ns
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft
recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.
The BY229F series is supplied in the conventional leaded SOD100 package.
The BY229X series is supplied in the conventional leaded SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
1
cathode
2
anode
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BY229F- / BY229X-
200
400
600
800
V
RSM
Peak non-repetitive reverse
-
200
400
600
800
V
voltage
V
RRM
Peak repetitive reverse voltage
-
200
400
600
800
V
RWM
Crest working reverse voltage
-
150
300
500
600
V
R
Continuous reverse voltage
-
150
300
500
600
V
I
F(AV)
Average forward current
1
square wave;
δ = 0.5;
-
8
A
T
hs ≤ 83 C
sinusoidal; a = 1.57;
-
7
A
T
hs ≤ 90 C
I
F(RMS)
RMS forward current
-
11
A
I
FRM
Peak repetitive forward current
t = 25
s; δ = 0.5;
-
16
A
T
hs ≤ 83 C
I
FSM
Peak non-repetitive forward
t = 10 ms
-
60
A
current
t = 8.3 ms
-
66
A
sinusoidal; T
j = 150 C
prior to surge; with
reapplied V
RWM(max)
I
2tI2t for fusing
t = 10 ms
-
18
A
2s
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1. Neglecting switching and reverse current losses.
k
a
12
case
12
case
September 1998
1
Rev 1.200
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