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| 型號： | 934043610115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 80 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-70, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 934043610115 |
2000 Mar 10
5
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
Fig.6
Drain-source on-state resistance as a
function of drain current; typical values.
Tj =25 °C.
(1) VGS = 2.5 V.
(2) VGS =5V.
(3) VGS =10V.
handbook, halfpage
24
0
16
8
MDA163
1
(1)
(2)
(3)
10
RDSon
(
)
ID (mA)
102
103
Fig.7
Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
VDS = 0.1 V; Tj =25 °C.
handbook, halfpage
02
10
80
60
20
0
40
4
RDSon
(
)
VGS (V)
68
MDA162
Fig.8
Temperature coefficient of gate-source
threshold voltage.
Typical VGSth at 1 mA.
k
V
GSth at Tj
V
GSth at 25 ° C
--------------------------------------
=
handbook, halfpage
0.7
0.8
0.9
1
1.1
1.2
0
50
100
150
50
k
Tj (
oC)
MRA785
Fig.9
Temperature coefficient of drain-source
on-state resistance.
Typical RDSon at 100 mA / 10 V.
(1) ID = 10 mA; VGS = 2.5 V.
(2) ID = 100 mA; VGS =10V.
k
R
DSon at Tj
R
DSon at 25 ° C
-----------------------------------------
=
handbook, halfpage
0.4
0.8
1.2
1.6
2
0
50
100
150
50
k
(1)
(2)
Tj (
oC)
MRA784
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