參數(shù)資料
型號(hào): 934043650115
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 10 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, SC-73, 4 PIN
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 351K
代理商: 934043650115
Philips Semiconductors
PI4884
TrenchMOS logic level FET
Product data
Rev. 02 — 12 April 2002
5 of 12
9397 750 09583
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Characteristics
Table 4:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS = 0 V
30
--V
VGS(th)
gate-source threshold voltage
ID = 250 A; VDS =VGS; Figure 9
1-
2V
IDSS
drain-source leakage current
VDS =24V; VGS =0V
Tj =25 °C
--1
A
Tj = 100 °C
--5
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
100
nA
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID =10A; Figure 7 and 8
-
11
16.5
m
VGS = 10 V; ID = 12 A;
-
8.9
10.5
m
Dynamic characteristics
gfs
forward transconductance
VDS =15V; ID =10A;
-
34
-
S
Qg(tot)
total gate charge
ID = 15 A; VDD =16V; VGS =5V; Figure 13
-
17.6
-
nC
Qgs
gate-source charge
-
4
-
nC
Qgd
gate-drain (Miller) charge
-
4.4
-
nC
Ciss
input capacitance
VGS =0V; VDS = 16 V; f = 1 MHz; Figure 11
-
1335 -
pF
Coss
output capacitance
-
391
-
pF
Crss
reverse transfer capacitance
-
190
-
pF
td(on)
turn-on delay time
VDD =16V; RD =10 ; VGS = 10 V
-
10.6
-
ns
tr
rise time
-
11.7
-
ns
td(off)
turn-off delay time
-
37
-
ns
tf
fall time
-19
-
ns
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 1 A; VGS =0V; Figure 12
-
0.7
1.0
V
trr
reverse recovery time
IS = 2.3 A; dIS/dt = 100 A/s; VGS =0V
-
70
-
ns
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