參數(shù)資料
型號(hào): 934044080115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, UMT3, SC-70, CMPAK-3
文件頁數(shù): 3/8頁
文件大?。?/td> 48K
代理商: 934044080115
1999 Apr 16
3
Philips Semiconductors
Preliminary specication
NPN resistor-equipped transistor
PDTC114TU
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =50V
100
nA
ICEO
collector cut-off current
IB = 0; VCE =30V
1
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC = 1 mA; VCE = 5 V
200
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
150
mV
R1
input resistor
7
10
13
k
Cc
collector capacitance
IE =ie = 0; VCB =10V; f=1MHz
2.5
pF
Fig.3
DC current gain as a function of collector
current; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
600
0
101
110
102
MGM902
IC (mA)
hFE
(1)
(2)
(3)
200
400
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
101
MGM901
102
VCEsat
(V)
(2)
(3)
(1)
101
110
102
IC (mA)
相關(guān)PDF資料
PDF描述
934044100115 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
934044110135 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
934044110115 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
934044120115 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
934044150115 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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