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參數(shù)資料
| 型號(hào)： | 934044700115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 150 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | 934044700115 |
1996 Oct 14
3
Philips Semiconductors
Preliminary specication
Schottky barrier double diode
PBYR2150CT
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulsed test: tp = 300 s; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT223 standard mounting conditions.
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
Tamb
operating ambient temperature
80
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.2
IF = 0.1 A; note 1
400
mV
IF = 0.5 A; note 1
650
mV
IF = 1 A; note 1
850
mV
IF = 1 A; Tj = 100 °C; note 1
690
mV
IR
reverse current
VR =VRRMmax; note 1; see Fig.3
1
mA
VR =VRRMmax; Tj = 100 °C; note 1;
see Fig.3
10
mA
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.4
100
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
70
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 93405 | 制造商:Harris Corporation 功能描述: |
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