參數(shù)資料
型號: 934045120113
廠商: NXP SEMICONDUCTORS
元件分類: 整流器
英文描述: 1.1 A, 500 V, SILICON, RECTIFIER DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 9/16頁
文件大?。?/td> 116K
代理商: 934045120113
1997 Nov 24
2
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYV27 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYV27-50
50
V
BYV27-100
100
V
BYV27-150
150
V
BYV27-200
200
V
BYV27-300
300
V
BYV27-400
400
V
BYV27-500
500
V
BYV27-600
600
V
VR
continuous reverse voltage
BYV27-50
50
V
BYV27-100
100
V
BYV27-150
150
V
BYV27-200
200
V
BYV27-300
300
V
BYV27-400
400
V
BYV27-500
500
V
BYV27-600
600
V
IF(AV)
average forward current
Ttp =85 °C; lead length = 10 mm;
see Figs 2, 3 and 4;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
BYV27-50 to 200
2.0
A
BYV27-300 and 400
1.9
A
BYV27-500 and 600
1.6
A
IF(AV)
average forward current
Tamb =60 °C; printed-circuit board
mounting (see Fig. 25);
see Figs 5, 6 and 7;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
BYV27-50 to 200
1.30
A
BYV27-300 and 400
1.25
A
BYV27-500 and 600
1.10
A
相關(guān)PDF資料
PDF描述
933543510163 1.3 A, 150 V, SILICON, RECTIFIER DIODE
934045730115 0.25 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE
934045730135 0.25 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE
934045740115 0.25 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE
934045740135 0.25 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE
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