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參數(shù)資料
| 型號(hào)： | 934045260118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 934045260118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7624-55
Standard level FET
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.8. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
Fig.10. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
0
2
468
10
0
20
40
60
80
100
16
12
10
9
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
ID/A
VSD/V
VGS/V =
0
20
406080
100
0
5
10
15
20
25
gfs/S
ID/A
0
1020
304050607080
15
20
25
30
35
40
RDS(ON)/mOhm
ID/A
VGS/V =
6
6.5
7
8
9
10
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
024
68
10
12
0
20
40
60
80
100
ID/A
VGS/V
175
25
Tj/C =
BUK759-60
-100
-50
0
50
100
150
200
0
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
April 1998
4
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93405 | 制造商:Harris Corporation 功能描述: |
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