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參數(shù)資料
| 型號(hào)： | 934045310115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 10.7 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | 934045310115 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7840-55
Standard level FET
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-sp
From junction to solder point
Mounted on any PCB
12
15
K/W
R
th j-amb
From junction to ambient
Mounted on PCB of Fig.18
-
70
K/W
STATIC CHARACTERISTICS
T
j= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA
55
-
V
voltage
T
j = -55C
50
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
2.0
3.0
4.0
V
T
j = 150C
1.2
-
V
T
j = -55C
-
4.4
V
I
DSS
Zero gate voltage drain current
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
T
j = 150C
-
100
A
I
GSS
Gate source leakage current
V
GS = ±10 V
-
0.04
1
A
T
j = 150C
-
10
A
±V
(BR)GSS
Gate source breakdown voltage I
G = ±1 mA
16
-
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 5 A
-
30
40
m
resistance
T
j = 150C
-
74
m
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 25 V; ID = 5 A; Tj = 25C
3
12
-
S
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
700
880
pF
C
oss
Output capacitance
-
200
240
pF
C
rss
Feedback capacitance
-
100
140
pF
t
d on
Turn-on delay time
V
DD = 30 V; ID = 9 A;
-
15
23
ns
t
r
Turn-on rise time
V
GS = 10 V; Rg = 10
-
5075ns
t
d off
Turn-off delay time
-
33
50
ns
t
f
Turn-off fall time
T
j = 25C
-
20
30
ns
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = -55 to 175C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
T
sp = 25C
-
10.7
A
current
I
DRM
Pulsed reverse drain current
T
sp = 25C
-
40
A
V
SD
Diode forward voltage
I
F = 5 A; VGS = 0 V
-
0.85
1.1
V
t
rr
Reverse recovery time
I
F = 5 A; -dIF/dt = 100 A/s;
-
45
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.3
-
C
January 1998
2
Rev 1.000
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