參數(shù)資料
型號: 934045730115
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 0.25 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC, SMD, UMT6, SC-88, 6 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 74K
代理商: 934045730115
1997 Oct 21
2
Philips Semiconductors
Product specication
High-speed double diode array
BAW56S
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAW56S consists of two dual
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small SMD SOT363 plastic package.
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
common anode (a1)
4
cathode (k3)
5
cathode (k4)
6
common anode (a2)
handbook, halfpage
65
4
12
3 MGL159
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: A1t.
MSA370
12
3
65
4
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. One or more diodes loaded.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
single diode loaded; see Fig.2
250
mA
all diodes loaded; see Fig.2
100
mA
IFRM
repetitive peak forward current
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Ts =60 °C; note 1
350
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
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