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參數(shù)資料
| 型號： | 934045740115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.25 A, 85 V, 4 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 74K |
| 代理商： | 934045740115 |
1997 Oct 21
3
Philips Semiconductors
Product specication
High-speed double diode array
BAV70S
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. One or more diodes loaded.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
715
mV
IF = 10 mA
855
mV
IF =50mA
1
V
IF = 150 mA
1.25
V
IR
reverse current
see Fig.5
VR = 25 V
30
nA
VR = 75 V
2.5
A
VR = 25 V; Tj = 150 °C60
A
VR = 75 V; Tj = 150 °C
100
A
Cd
diode capacitance
VR = 0; f = 1 MHz; see Fig.6
1.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 ; measured at IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
when switched from IF = 10 mA; tr = 20 ns; see Fig.8
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
255
K/W
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| 934045750135 | 19.6 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 934045750115 | 19.6 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
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