參數(shù)資料
型號: 934045770114
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, CERAMIC PACKAGE-2
文件頁數(shù): 4/8頁
文件大?。?/td> 68K
代理商: 934045770114
1998 Jan 30
4
Philips Semiconductors
Product specication
Microwave power transistor
BLS2731-50
VCB = 40 V; class-C; tp = 100 s; δ = 10%.
(1) f = 3.1 GHz.
(2) f = 2.7 GHz.
(3) f = 2.9 GHz.
Fig.2
Load power as a function of drive power;
typical values.
handbook, halfpage
010
60
0
20
40
2
468
MGM533
PL
(W)
PD (W)
(1)
(2)
(3)
Fig.3
Power gain as function of frequency;
typical values.
VCB = 40 V; class-C; PL = 50 W; tp = 100 s; δ = 10%.
handbook, halfpage
2.6
12
8
4
0
2.8
3
3.2
MGM534
f (GHz)
Gp
(dB)
Fig.4
Input impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL =50W.
handbook, halfpage
2.6
2.8
3
3.2
16
12
4
0
8
MGM535
f (GHz)
Zi
(
)
ri
xi
Fig.5
Load impedance as function of frequency
(series components); typical values.
VCB = 40 V; class-C; PL =50W.
handbook, halfpage
2.6
2.8
3
3.2
f (GHz)
ZL
(
)
XL
RL
12
8
4
0
4
MGM536
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