參數(shù)資料
型號: 934047020127
廠商: NXP SEMICONDUCTORS
元件分類: 整流器
英文描述: 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-247
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/5頁
文件大?。?/td> 40K
代理商: 934047020127
Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045WT series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 40 V/ 45 V
Fast switching
Reverse surge capability
I
O(AV) = 30 A
High thermal cycling performance
Low thermal resistance
I
FSM = 300 A
V
F ≤ 0.6 V
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Dual, common cathode schottky
PIN
DESCRIPTION
rectifier
diodes
in
a
plastic
envelope. Intended for use as
1
anode 1 (a)
output rectifiers in low voltage, high
frequency switched mode power
2
cathode (k)
supplies.
3
anode 2 (a)
The
PBYR3045WT
series
is
supplied in the conventional leaded
tab
cathode
SOT429 (TO247) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR30
40WT
45WT
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 107 C
-
40
45
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5; T
mb ≤ 124 C
-
30
A
current (both diodes
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 124 C
-
30
A
current per diode
I
FSM
Non-repetitive peak forward
t = 10 ms
-
300
A
current per diode
t = 8.3 ms
-
330
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
2
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
1.6
K/W
to mounting base
both diodes
-
1.2
K/W
R
th j-a
Thermal resistance junction
in free air
-
45
-
K/W
to ambient
k
a1
a2
13
2
3
1
July 1998
1
Rev 1.200
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