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參數(shù)資料
| 型號： | 934047310115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.3 A, 250 V, SILICON, SIGNAL DIODE |
| 封裝： | CERAMIC, SMD, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 934047310115 |
2002 May 28
3
Philips Semiconductors
Product specication
General purpose diode
BAS221
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
200
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
315
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 100 mA
1
V
IF = 200 mA
1.25
V
IF = 300 mA
1.4
V
IR
reverse current
see Fig.5
VR = 200 V
100
nA
VR = 200 V; Tj = 150 °C
100
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 ; measured at
IR = 3 mA; see Fig.7
50
ns
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