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參數(shù)資料
| 型號(hào)： | 934047310135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.3 A, 250 V, SILICON, SIGNAL DIODE |
| 封裝： | CERAMIC, SMD, 2 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 56K |
| 代理商： | 934047310135 |
2002 May 28
5
Philips Semiconductors
Product specication
General purpose diode
BAS221
handbook, halfpage
102
10
200
0
MBG381
100
Tj (
oC)
IR
(
A)
1
10 2
10
1
(1)
(2)
Fig.5
Reverse current as a function of junction
temperature.
(1) VR =VRmax; maximum values.
(2) VR =VRmax; typical values.
handbook, halfpage
04
8
6
2
1.0
0.8
0.2
0.6
0.4
MBG447
VR (V)
Cd
(pF)
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj =25 °C.
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V
I x R
RF
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse recovery time and waveforms.
(1) IR = 3 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Circuit capacitance C
≤ 1 pF (oscilloscope input + parasitic capacitance).
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