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參數(shù)資料
| 型號： | 934047460115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CMPAK-4 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 104K |
| 代理商： | 934047460115 |
1998 Mar 11
5
Philips Semiconductors
Product specication
NPN 22 GHz wideband transistor
BFG410W
Fig.3
DC current gain as a function of collector
current; typical values.
(1) VCE =3V.
(2) VCE =2V.
(3) VCE =1V.
handbook, halfpage
0
4
12
16
8
MGG717
120
100
0
40
80
60
20
IC (mA)
hFE
(1)
(2)
(3)
IC = 0; f = 1 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
01
5
100
60
20
0
40
80
23
4
MGG718
VCB (V)
Cre
(fF)
Fig.5
Transition frequency as a function of
collector current; typical values.
VCE = 2 V; f = 2 GHz; Tamb =25 °C.
handbook, halfpage
25
0
5
10
15
20
MGG719
110
102
fT
(GHz)
IC (mA)
VCE = 2 V; f = 900 MHz.
Fig.6
Maximum stable gain as a function of
collector current; typical values.
handbook, halfpage
04
8
16
12
MGG720
30
0
10
20
IC (mA)
MSG
(dB)
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