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參數(shù)資料
| 型號： | 934047470115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CMPAK-4 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 111K |
| 代理商： | 934047470115 |
1998 Mar 11
2
Philips Semiconductors
Product specication
NPN 25 GHz wideband transistor
BFG425W
FEATURES
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Pagers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 Simplified outline SOT343R.
Marking code: P5.
handbook, halfpage
Top view
MSB842
21
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
10
V
VCEO
collector-emitter voltage open base
4.5
V
IC
collector current (DC)
25
30
mA
Ptot
total power dissipation
Ts ≤ 103 °C
135
mW
hFE
DC current gain
IC = 25 mA; VCE =2V; Tj =25 °C
5080120
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz
95
fF
fT
transition frequency
IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C
25
GHz
Gmax
maximum power gain
IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =25 °C
20
dB
F
noise gure
IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt
1.2
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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