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參數(shù)資料
| 型號： | 934047480115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC CMPAK-4 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 116K |
| 代理商： | 934047480115 |
1998 Jul 06
4
Philips Semiconductors
Product specication
UHF power transistor
BFG21W
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Figs 4 and 5).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA
15
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
4.5
V
V(BR)CER
collector-emitter breakdown voltage
RBE <1k, IC =10mA
10
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
1
V
ICES
collector leakage current
VCE =5V; VBE =0
10
A
hFE
DC current gain
IC = 200 mA; VCE = 2 V
40
100
Cc
collector capacitance
IE =ie= 0; VCB = 3 V; f = 1 MHz
3pF
Cre
feedback capacitance
IC = 0; VCB = 3.6 V; f = 1 MHz
1.5
pF
fT
transition frequency
IC = 200 mA; VCE = 3.6 V;
f = 700 MHz
18
GHz
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
(mA)
PL
(dBm)
Gp
(dB)
ηC
(%)
Pulsed; class-AB;
δ < 1 : 2; tp = 5 ms
1.9
3.6
1
26
≥10
typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions:
δ =1:2;
tp = 5 ms; f = 1.9 GHz at VCE = 4.5 V.
Fig.3
Power gain and collector efficiency as a
function of the load power; typical values.
Pulsed, class-AB operation;
δ < 1 : 2; tp = 5 ms.
f = 1.9 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 26 dBm.
handbook, halfpage
5
16
8
12
4
0
80
40
60
20
0
10
30
MGM220
15
20
25
PL (dBm)
ηC
(%)
ηC
Gp
(dB)
Gp
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