參數(shù)資料
型號(hào): 934048710118
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: 12 A, 500 V, SCR
封裝: PLASTIC, SMD, SC-63, DPAK-3
文件頁數(shù): 1/6頁
文件大?。?/td> 46K
代理商: 934048710118
Philips Semiconductors
Product specification
Thyristors
BT151S series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated thyristors in a plastic
SYMBOL
PARAMETER
MAX.
UNIT
envelope,
suitable
for
surface
mounting, intended for use in
BT151S -
500R
650R
800R
applications
requiring
high
V
DRM,
Repetitive peak off-state
500
650
800
V
bidirectional
blocking
voltage
V
RRM
voltages
capability and high thermal cycling
I
T(AV)
Average on-state current
7.5
A
performance. Typical applications
I
T(RMS)
RMS on-state current
12
A
include motor control, industrial and
I
TSM
Non-repetitive peak
100
A
domestic
lighting,
heating
and
on-state
static switching.
current
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
NUMBER
1
cathode
2
anode
3
gate
tab
anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R
650R
-800R
V
DRM, VRRM
Repetitive peak off-state
-
500
1
650
1
800
V
voltages
I
T(AV)
Average on-state current
half sine wave; T
mb ≤ 103 C
-
7.5
A
I
T(RMS)
RMS on-state current
all conduction angles
-
12
A
I
TSM
Non-repetitive peak
half sine wave; T
j = 25 C prior to
on-state current
surge
t = 10 ms
-
100
A
t = 8.3 ms
-
110
A
I
2tI2t for fusing
t = 10 ms
-
50
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 20 A; IG = 50 mA;
-
50
A/
s
on-state current after
dI
G/dt = 50 mA/s
triggering
I
GM
Peak gate current
-
2
A
V
RGM
Peak reverse gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
1
2
3
tab
ak
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
January 2002
1
Rev 1.400
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