參數(shù)資料
型號: 934048830118
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: 8 A, 500 V, SCR
文件頁數(shù): 2/8頁
文件大小: 72K
代理商: 934048830118
Philips Semiconductors
Product specification
Thyristors
BT300S series
BT300M series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
-
2.2
K/W
junction to mounting base
R
th j-a
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
-
2
15
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
-
10
40
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
10
20
mA
V
T
On-state voltage
I
T = 12 A
-
1.35
1.6
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.6
1.5
V
D = VDRM(max); IT = 0.1 A; Tj = 125 C
0.25
0.4
-
V
I
D, IR
Off-state leakage current
V
D = VDRM(max); VR = VRRM(max); Tj = 125 C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 C;
off-state voltage
exponential waveform.
Gate open circuit
50
100
-
V/
s
R
GK = 100
200
1000
-
V/
s
t
gt
Gate controlled turn-on
I
TM = 10 A; VD = VDRM(max); IG = 0.1 A;
-
2
-
s
time
dI
G/dt = 5 A/s
t
q
Circuit commutated
V
D = 67% VDRM(max); Tj = 125 C;
-
70
-
s
turn-off time
I
TM = 12 A; VR = 25 V; dITM/dt = 30 A/s;
dV
D/dt = 50 V/s; RGK = 100
September 1997
2
Rev 1.100
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