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參數(shù)資料
| 型號(hào)： | 934048970118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 800 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 934048970118 |
Philips Semiconductors
Product specification
Triacs
BT136S series
BT136M series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
3.0
K/W
junction to mounting base
half cycle
-
3.7
K/W
R
th j-a
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT136S-
...
...F
...G
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
11
35
25
50
mA
T2- G+
-
30
70
100
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
7
20
30
mA
T2+ G-
-
16
30
45
mA
T2- G-
-
5
20
30
mA
T2- G+
-
7
30
45
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
5
15
30
mA
V
T
On-state voltage
I
T = 5 A
-
1.4
1.70
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 C
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT136S (or BT136M)-
...
...F
...G
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);
100
50
200
250
-
V/
s
off-state voltage
T
j = 125 C; exponential
waveform; gate open
circuit
dV
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 95 C;
-
10
50
-
V/
s
commutating voltage
I
T(RMS) = 4 A;
dI
com/dt = 1.8 A/ms; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 6 A; VD = VDRM(max);-
-
2
-
s
time
I
G = 0.1 A; dIG/dt = 5 A/s
October 1997
2
Rev 1.100
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