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參數(shù)資料
| 型號(hào)： | 934049940115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 47K |
| 代理商： | 934049940115 |
1999 Apr 12
3
Philips Semiconductors
Product specication
PNP resistor-equipped double transistor
PUMB4
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
5V
IO
output current (DC)
100
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
ICBO
collector cut-off current
IE = 0; VCB = 50 V
100 nA
ICEO
collector cut-off current
IB = 0; VCE = 30 V
1
A
IB = 0; VCE = 30 V; Tj = 150 °C
50
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100 nA
hFE
DC current gain
IC = 1 mA; VCE = 5 V
200
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
150 mV
R1
input resistor
7
10
13
k
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
3pF
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