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參數(shù)資料
| 型號(hào)： | 934050210127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 934050210127 |
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN003-25W
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb)
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS)
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID)
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0.001
0.01
0.1
1
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0
10
20
30
40
50
60
70
80
90
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
2.2 V
Tj = 25 C
VGS = 3 V
2.3 V
2.4 V
2.5 V
2 V
10 V
2.1 V
5 V
1
10
100
1000
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 100 us
0
0.002
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.02
0
102030405060708090
100
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS = 10V
Tj = 25 C
2.4 V
5 V
2.5 V
2.2 V
2.3 V
2 V
2.1 V
3 V
October 1999
4
Rev 1.100
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