參數(shù)資料
型號(hào): 934050320135
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, 4 PIN
文件頁數(shù): 10/16頁
文件大?。?/td> 152K
代理商: 934050320135
1997 Dec 02
3
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1105; BF1105R; BF1105WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
7V
ID
drain current
30
mA
IG1
gate 1 current
±10
mA
IG2
gate 2 current
±10
mA
Ptot
total power dissipation
Tamb ≤ 80 °C; note 1; see Fig.4
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
+150
°C
Fig.4 Power derating curve.
handbook, halfpage
0
40
80
160
250
0
200
MGM243
120
150
100
50
Ptot
(mW)
Tamb (°C)
相關(guān)PDF資料
PDF描述
05F9179 IC-WIDE BANDWIDTH S/G SIG.COND
934054290127 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934054300118 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
934054450118 50 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
934054440127 50 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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