參數(shù)資料
型號(hào): 934050520135
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: 7.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 5/11頁(yè)
文件大?。?/td> 88K
代理商: 934050520135
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7880-55
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D = 2.5 A; VDD ≤ 25 V;
-
30
mJ
unclamped inductive turn-off
V
GS = 10 V; RGS = 50 ; Tsp = 25 C
energy
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tsp)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tsp); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. T
sp = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-sp = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
0.1
1
10
100
VDS/V
RDS(ON) = VDS/ID
DC
ID/A
tp =
1 us
10us
100 us
1 ms
10ms
100ms
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1.0E-06
0.0001
0.01
1
100
0.01
0.1
1
10
100
Zth/ (K/W)
t/s
0.5
0.2
0.1
0.05
0.02
D =
tp
T
P
t
D
April 1998
3
Rev 1.100
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