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參數(shù)資料
| 型號(hào)： | 934051230112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | 934051230112 |
2001 Nov 02
4
Philips Semiconductors
Product specication
750 MHz, 18.5 dB gain power doubler amplier
BGD702N
Table 2
Bandwidth 40 to 600 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 541.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 596.5 MHz.
2. Measured according to DIN45004B:
fp = 590.25 MHz; Vp =Vo;
fq = 597.25 MHz; Vq =Vo 6 dB;
fr = 599.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 588.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
18
19
dB
f = 600 MHz
18.5
dB
SL
slope cable equivalent
f = 40 to 600 MHz
0.2
2
dB
FL
atness of frequency response
f = 40 to 600 MHz
±0.2
dB
S11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 320 MHz
18
dB
f = 320 to 600 MHz
17
dB
S22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
19
dB
f = 160 to 320 MHz
18
dB
f = 320 to 600 MHz
17
dB
S21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
85 channels at;
Vo = 44 dBmV;
measured at 595.25 MHz
65
dB
Xmod
cross modulation
85 channels at;
Vo = 44 dBmV;
measured at 55.25 MHz
65
dB
CSO
composite second order
distortion
85 channels at;
Vo = 44 dBmV;
measured at 596.5 MHz
60
dB
d2
second order distortion
note 1
70
dB
Vo
output voltage
dim = 60 dB; note 2
64
dBmV
F
noise gure
see Table 1
dB
Itot
total current consumption (DC)
note 3
435
mA
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