參數(shù)資料
型號(hào)： 934051460118
廠商： NXP SEMICONDUCTORS
元件分類： 整流器
英文描述： 5 A, 25 V, SILICON, RECTIFIER DIODE
封裝： PLASTIC, SMD, D2PAK-3
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 53K
代理商： 934051460118
Philips Semiconductors
Product specification
Rectifier diodes
BYV116, BYV116B series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 20 V/ 25 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 10 A
Low thermal resistance
V
F ≤ 0.54 V
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power
supplies.
The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package.
The BYV116B series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV118-
20
25
BYV116B-
20
25
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 124 C
-
20
25
V
I
O(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 123 C
-
10
A
current (both diodes
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 123 C
-
10
A
current per diode
I
FSM
Non-repetitive peak forward
t = 10 ms
-
50
A
current per diode
t = 8.3 ms
-
55
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
1. It is not possible to make connection to pin 2 of the SOT404 package.
k
a1
a2
13
2
13
tab
2
12 3
tab
March 1998
1
Rev 1.000
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