參數(shù)資料
型號(hào): 934051580145
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, EMT3, SC-75, SMPAK-3
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 66K
代理商: 934051580145
1998 Nov 25
2
Philips Semiconductors
Product specication
PNP resistor-equipped transistor
PDTA123JE
FEATURES
Built-in bias resistors R1 and R2
(typ. 2.2 k
and 47 k
respectively)
Simplification of circuit design
Reduces number of components
and board space.
APPLICATIONS
Especially suitable for space
reduction in interface and driver
circuits
Inverter circuit configurations
without use of external resistors.
DESCRIPTION
PNP resistor-equipped transistor in a
SC-75 (SOT416) plastic package.
NPN complement: PDTC123JE.
PINNING
PIN
DESCRIPTION
1
base/input
2
emitter/ground (+)
3
collector/output
Fig.1 Simplified outline (SC-75; SOT416) and symbol.
handbook, halfpage
MAM345
1
2
3
R1
R2
Top view
12
3
Fig.2
Equivalent inverter
symbol.
MGA893 - 1
1
3
2
MARKING
TYPE
NUMBER
MARKING
CODE
PDTA123JE
27
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
50
V
IO
output current (DC)
100
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
150
mW
hFE
DC current gain
IC = 10 mA; VCE = 5 V
100
R1
input resistor
1.54
2.2
2.86
k
resistor ratio
17
21
26
R2
R1
--------
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