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參數資料
| 型號： | 934051600115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 934051600115 |
1999 May 21
3
Philips Semiconductors
Product specication
PNP resistor-equipped transistor
PDTA124XE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
10
V
VI
input voltage
positive
+10
V
negative
40
V
IO
output current (DC)
100
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
150
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 50 V
100
nA
ICEO
collector cut-off current
IB = 0; VCE = 30 V
1
A
IB = 0; VCE = 30 V; Tj = 150 °C
50
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
120
A
hFE
DC current gain
IC = 5 mA; VCE = 5V
80
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
150
mV
Vi(off)
input-off voltage
IC = 100 A; VCE = 5V
800
500
mV
Vi(on)
input-on voltage
IC = 2 mA; VCE = 300 mV
2
1.1
V
R1
input resistor
15.4
22
28.6
k
resistor ratio
1.7
2.1
2.6
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
3pF
R2
R1
--------
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