參數(shù)資料
型號: 934052230127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 45 A, 30 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 5/11頁
文件大小: 99K
代理商: 934052230127
Philips Semiconductors
Product specification
TrenchMOS
transistor
PHP45N03LT, PHB45N03LT, PHD45N03LT
Logic level FET
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
-
45
A
(body diode)
I
SM
Pulsed source current (body
-
180
A
diode)
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.95
1.2
V
I
F = 40 A; VGS = 0 V
-
1.0
-
t
rr
Reverse recovery time
I
F = 40 A; -dIF/dt = 100 A/s;
-
52
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 25 V
-
0.08
-
C
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 5 V
Fig.3. Safe operating area
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
1
10
100
1000
PHP42N03LT
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
RDS(ON)
= VDS/ID
1 ms
100 ms
tp = 10us
DC
10 ms
100 us
Tmb = 25 C
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
1E-01
1E+01
0.01
0.1
1
10
7528-30
t / s
Zth j-mb / (K/W)
D =
tp
T
P
t
D
D =
0
0.02
0.05
0.1
0.2
0.5
November 1998
3
Rev 1.500
相關(guān)PDF資料
PDF描述
934052250118 45 A, 30 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
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